Lasermark. "Silicon Wafers for the Semiconductor Industry from Silicon Inc. Silicon Inc. provides prime, test and reclaim silicon wafers in diameters from 1 inch to 12 inch. Several AIX 2600G3 systems have already been installed at customers for the production of SiGe epitaxial structures, using multiple 8-inch substrates. The Si wafer industry has extremely well defined SEMI specifications, and a general outline as to how to properly locate these specifications is given here. Our main products including standard silicon wafers SSP (single side polished),DSP (Double side polished), test silicon wafers and prime silicon wafers , SOI (Silicon on Insulator) wafer and coinroll wafers with diameter up to 12 inch, CZ/MCZ/FZ,Neutron radiation, almost any orientation, off cut, high and low resistivity,ultra flat, ultra thin, thick wafers etc. Wafer Technology offers single crystal Gallium Arsenide grown at low pressure from high purity polycrystalline Gallium Arsenide in a vertical temperature gradient (VGF-Vertical Gradient Freeze). Wafer unclamped. Although there are a number of suppliers dealing with silicon wafers, the performance of suppliers with larger silicon sizes 200mm is dismal. Interestingly, the move from 100mm (4 inch) wafers to 150mm (6 inch) wafers increased the silicon area by 125 percent Ñ the same relative gain that will be realized when semiconductor companies make the transition from todayÕs 200mm (8 inch) wafers to 300mm (12 inch). A wide variety of gaas wafer options are available to you, There are 85 suppliers who sells gaas wafer on Alibaba.com, mainly located in Asia. Equipment name & Badger ID Training ... wafers and pieces can be loaded directly on the grounded electrode. To close this popup you can press escape or click the close icon. This is a model I created for a 8 in wafer cassette carrier. In contrast, that … Wafer clamped. Alternative Materials. GaAs Wafer We manufacture semi-insulating and semiconducting gallium arsenide substrates with diameters from 3" to 8" for high-frequency and optoelectronic applications. ft facility is a certified manufacturing facility for Silicon, Gallium Arsenide, Germanium, Indium Phosphide, Sapphire and Quartz. Now, GaAs wafers have an array of sizes you can choose from; from 25.4 mm to 450 mm. Semi-insulating GaAs substrates 3 inch. As one of the most professional GaAs wafer manufacturers and suppliers in China, we're featured by quality products and good service. With some materials, only up to 2-inch in diameter is supported. MicroLEDs could also propel the GaAs wafer market, particularly for red pixels – but unlike sapphire, GaAs does not solely rely on the LED market. ... zowel voor GaAs en de meeste halfgeleiders. Height from 7" to 10" PBN Crucibles for LEC. Silicon wafer suppliers can be time consuming -to find the best polished silicon … Multi-Solar Wafer; Mono Solar Wafer; Multi-Solar; Mono Solar; silicon ingot; Mono; long silicon ingot; Ingot Test; IC Ingot Large Diameter; IC Grade Silicon Ingot; 8 Inch IC Ingot; GaAs Wafer ; GaAs Wafer ; 300mm IC Si Wafer; 200mm IC Si Wafer; 150mm IC Si Wafer 8 Inch (200 mm) View Wafers. Compound Semiconductor™ is an Angel Business Communications publication. Wafer size Mainly 3 inch, 6 inch 2 inch, 4 inch and 5 inch are available . 6- inch wafer properties are the same as the properties of 3-inch wafers due to the careful management of slicing facilities, precision of the slicing equipment and slicing conditions. The company used extensive numerical modeling techniques to scale-up its existing AIX 2600 G3 reactor in order to allow multiple 8-inch growth. The required electrical properties are obtained by adding dopants such as carbon, silicon, tellurium or zinc. Recomended Products: GaAs wafer for LED N-Type. Our standard wafer diameters range from 25.4 mm (1 inch) to 300 mm (11.8 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. The emission wavelength of GaAs/A1GaAs lasers is 854.7 0.8 nm (o). GaAs substrate, silicon wafer, lapped wafer, Silicon carbide, SiC, GaN, LN, LT, Semiconductor, 2 3 4 6 8 12inch, fz , cz , dicing, grinding, metal, ... Home › GaAs Substrate 4 Inch Gallium Arsenide Single Sided Polish Semiconductor Wafer. Indeed, there is a strong forecasted demand for 3D sensing applications, causing GaAs to grow with a CAGR of no less than 8% 2019 – 2025. 7 ） InP epitaxial wafer: InP Substrate: P/E 2"dia×350+/-25um, n-type InP:S (100)+/-0.5°, EDP<1E4/cm2. The 12,000 sq. Please rest assured to buy GaAs wafer at competitive price from our factory.Our company has a quality assurance system have been established for 3 Inch Silicon Wafer, P type wafer, 6 inch gaas wafer. SINCE 2002 Research & Innovation We have a wide range of products, including wafer & substrate and sputter target materials , product's main application is for Semiconductor, Microelectronics , Opto-electronics , Nanotechnology , MEMS and Biotechnology . We are the leading manufacturer of compound semiconductor material in China. Glass Wafer. terms of percentage increase in wafer area, as shown in Figure 7-3. Design Wafer Check Valve Pipe Size (Inch) 8 Tube Outside Diameter (Inch) 13-3/8 End Connections Wafer Material Plastic Material PVC Seal Material EPDM WOG Rating (psi) 150 Material Grade ASTM D1784 Cell Class 12454 Spring Material Stainless Steel Maximum Temperature (F) 140.000 Minimum Temperature (F) 35.000 Maximum Working Pressure (psi) 150.00 Color Gray 8-inch GaAs wafers supplied by Freiberger Compound Materials GmbH were used as the growth substrates (see related story). 884 gaas wafer products are offered for sale by suppliers on Alibaba.com, of which other metals & metal products accounts for 3%, solar energy systems accounts for 2%, and semiconductors accounts for 1%. To prove you are human and understand the above, please complete the reCaptcha: Please note that Compound Semiconductor Magazine reserves the right to refuse subscriptions. Our wafers are manufactured from LEC or VGF grown GaAs single crystals GaAs. In this brief article we outline the general contents of the SEMI Specifications for Si substrates referred to as SEMI M1-0302 & SEMI M1.1-M1.15. Wafer Containers/Jars come in optional Twist Top or Snap Lids. 3 Inch (76.2 mm) View Wafers. 8-inch GaAs wafers supplied by Freiberger Compound Materials GmbH were used as the growth substrates (see related story). The bond energy was View Wafers. Silicon wafer is the most common material and widely used for a varity of high-tech industries , including integrated circuits , detector / sensor device , MEMS fabrication, opto-electronic components, and solar cells . Orientation: <100> to <111>15°±1.0° Dopant: Si-doped N-Type. There are t hree primary factors leading to this: (1) increased end-product demand, (2) uneven supply of foundry equipment and (3) the ongoing US-China trade tensions. 2 Inch (50.8 mm) View Wafers. Freiberger has established a worldwide reputation as supplier of products that meet highest quality standards. In our elaborate analysis and measuring processes all products undergo a comprehensive characterization enabling us to meet the customer requirements. Silicon wafers are the most essential element in the realization of ICs. We manufacture semi-insulating and semiconducting gallium arsenide substrates with diameters from 3" to 8" for high-frequency and optoelectronic applications. Short Name: 8" Items per page . According to a recent survey, the global market for large silicon wafers (LSA), the largest semiconductor market in Europe and North America, has reached US $xx and is growing at an annual rate of 2.5% to 3%. Normaliter worden wafers met een diamant zaag of diamantdraad van een halfgeleider boule gesneden en daarna aan een of beide kanten gepolijst. Soitec has engineered new Smart Cut SiC wafers with these problems in mind, first by substantially improving the quality of the SiC layer on the substrate, and second by transitioning from current 6-inch SiC wafers to 8-inch wafers in order to reduce the cost. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. A DigiTimes report sheds light on various foundry companies, including UMC (United Microelectronics), Global Foundries, and Vanguard International Semiconductor (VIS) have raised their 8-inch foundry quotes by 10-15% in Q4-2020, with the quotes set to rise by another 20-40% in 2021. 4/6 inch GaAs Wafer Protos Spacer Protos Carrier ( MA-6S/MA-8S ) Protos Cushion Product code Applied Wafer size ND-6 ND-8 6 inch frame wafers 8 inch frame wafers D A(mm) 252 322 230±1 299±1 h(mm) 40 57 ND-12 12 inch frame wafers 43045 403±1 H(mm) 83 92 74 Product Code Specification Freiberger has established a worldwide reputation as supplier of products that meet highest quality standards. PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal … Soitec currently has a SiC-wafer … 4 Inch (100 mm) View Wafers. The result is n-type or p-type high-resistance (>107 Ωcm) or low-resistance (<10 - 2 Ωcm) semiconductors. axis with only the side heaters. 3.Gallium Nitride and Indium Gallium Nitride, for semiconductor uses, produce blue and violet light-emitting diodes (LEDs) and diode lasers. Fuleda Technology provides silicon wafer solutions, our main products including test prime grade semiconductor silicon wafer with diameter 1~12inch, ultra-thin thick substrate, and offer downsizing grinding dicing film deposition service. Using this structure, a 4-inch InP single crystal with a mirror-like surface and good thickness uniformity (Δd/d=±10%) was obtained. The diameter of the boule determines wafer diameter. Two Records For Infinera Trans-Atlantic Trial, Teledyne E2v HiRel Unveils New 650V GaN HEMTs, NS Nanotech Shows Far-UVC Technology At CES, PhotonDelta Invests In Spectroscopy Start-up, 3D Imaging From LED Lighting And A Smartphone, Monolithic Power Systems Uses EPC EGaN FETs, Seoul Semi And Seoul Viosys Show Latest Tech At CES, Violeds Can Kill 99 Percent Of COVID In Under A Second, GaN Systems Launches Novel GaN Power Stage, Taiyo Nippon Sanso MOCVD Division Wins Industry Award, Smartphone LCD Displays Lose Ground To OLED, Cree Announces SiC Power Module Portfolio, Taiwanese Collaboration Picks Veeco Platform, Supercritical Carbon Dioxide Spawns Superior MOSFETs, Knowmade: A Perspective On The Allos-Azur Deal, Making MicroLED Displays With A Fluidic Assembly Process. As of 2005, here are the diameters for start-of-the-art boules: Silicon: 12 inches (300 mm), 8 inches is typical) InP: 4inches (100 mm) GaAs: 6 inches (150 mm) SiC: 3 inches (75 um) Sapphire: 3 inches (75 mm) Up to 8-inch in diameter is supported by magnetron sputtering systems. Please enter the industry that you work in: AngelTech Live II is now available on-demand! Lot - for the purpose of definitions, 8-inch wafers are also commonly used mature process wafers, with global production capacity accounting for 25%. Semiconductor foundries across the board are preparing to raise price quotes of their 8-inch wafers from 2021. EV Group Contact Aligner evalign : EV Group Contact Aligner Training ... (GaAs) 90°C Oven oven90 These high-quality wafer containers provide excellent protection for sensitive silicon wafers during transport & shipping. Semi-insulating GaAs substrates 3 inch. The maximum silicon wafer size is 12 inches, and the compound semiconductor wafer size is 6 inches. View Wafers. InGaAs SQW lasers is plotted in fig. Please also send me information via email about: Submitting Editorial for Compound Semiconductor, Monolithic Power Systems uses EPC eGaN FETs, Dedicated breakout room for partner presentations. Our staff has over 30 years experience in the manufacture and sales of silicon wafers. Available from 3" in diameter to 8" in diameter ... 2 inch, 3 inch, 4 inch en hoger . Beyond 300mm, the same gain requires a jump to 450mm wafers. Gallium Arsenide can be supplied in as-cut, etched or polished wafer forms. Most silicon foundry work involves digital VLSI, with simple on/off gates, large die sizes, 8-inch (or larger) wafers, mature processes and designs that are easily ported from one foundry to another. Device protection and contamination control begins at the wafer fab and extends to the assembly site. Polish: SSP | DSP. The full set of SEMI Specifications for Si Substratesand related SEMI Specification documents are extensive. The semiconductor industry had invested heavily to increase the wafer size during the last 30 years, so while foundries used to produce 1 inch wafers, today’s common wafer size is 300mm (11.8 times larger than 1 inch). 1992 We are the leading manufacturer of compound semiconductor material in China. Usually, up to 4-inch (101.6-mm) in diameter is supported. Wafer clamped. Optowell Co., Ltd. Si waferprocess service Si EpitaxyService Wafer : 6 “ Si wafer Doping : p, n type Doping Level : i-Si ~ 1E20/cm3 Thickness : 10 nm~ 10 um Short Name: 6" Items per page . 8 inch wafer . Currently, 8-inch wafer production capacity is at 99%. SEMI-Standard value is ±5 degrees. Wafer unclamped. Process results obtained during Aixtron s development program demonstrated the scalability of the existing 4- and 6-inch processes to 8-inch growth. GaAs foundry Win Semiconductors plans to expand production capacity by around 5,000 6-inch wafers monthly in the second quarter of 2020 to meet … Wafer insertion 290°C (554°F) Process Enhancement Wafer Carriers A220-200B50MP-0215 A200-80MG-0215 A192-81M-0215 Traditional Process Wafer Carriers ORDERING INFORMATION — Process enhancement wafer carriers Part number Capacity Automation features Notes A220-200B50MP-0215 50 Lift points and V-notch locators on ends, V-notch locators on rails 6 Inch (150 mm) View Wafers. We are one of the world’s leading glass wafer suppliers, provide thin & ultra-thin glass wafers and substrates which are made of different materials, such as Borofloat, Fused Silica & Quartz, BK7, Soda Lime etc for MEMS, fiber optic AWG, LCD panels and OLED substrates application. Billions of Dollars Percent of Sales Revenues 6.0 8.0 10.0 12.0 14.0 16.0 18.0 Wafers worden in meerdere groottes gemaakt, van 1 inch (25,4 mm) tot 11,8 inch (300 mm) en met diktes in de orde van 0,75 mm. PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs (Gallium Arsenide) Wafers processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. PAM-XIAMEN offer wafer technology consultant service with our 29+ experience in semiconductor material. Process results obtained during Aixtron s development program demonstrated the scalability of the existing 4- and 6-inch processes to 8-inch growth. Below is a picture of some six-inch diameter GaAs boules we "borrowed" off the web. OVERVIEW of Wafer Container - 8 inch (200mm) Wafer container 8 inch (200mm) Jars and Lids are available through Professional Plastics & SPI-Semicon. 1996 market sizes of $26.6 billion for wafer processing equipment, $8.8 billion for testing equipment, $4 billion for assembly equip-ment and $2.5 billion for facility equipment. their quality is suitable for direct use in epitaxy processes. The wafer surfaces are generally epi-ready (extremely low contamination) i.e. Dimention: 2 inch | 3 inch | 4 inch. This website uses cookies to ensure you get the best experience on our website, © 2021 Freiberger Compound Materials GmbH, Homogeneity Region of GaAs (detail of phase diagram), Thickness (see applicable standards for various diameters). Gallium Arsenide Wafer Price - Select 2021 high quality Gallium Arsenide Wafer Price products in best price from certified Chinese Wafer Board manufacturers, Led Wafer suppliers, wholesalers and factory on Made-in-China.com ... 4 Inch GaAs Wafer (5PCS pack) Si Doped 350um (100) 15 Degree off Toward 111A Prime Grade . GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED ,LD And Microelectronics Product Description (GaAs) Gallium Arsenide Wafers. Diameter: 50.8 ± 0.25mm / 76.2± 0.25mm / 100.0 ± 0.4mm Read More As one of the most professional GaAs wafer manufacturers and suppliers in China, we're featured by quality products and good service. GaAs - Gallium Arsenide. Wafer flatness is determined by means of an interferometry measuring equipment using a focal plane on front surface as a reference plane (edge exclusion is 3 mm). ... All wafers are offered with high quality epitaxy ready finishing. 6 inch wafer . The slots may be the least accurate feature, but overall I would say the model is about %75-80 accurate. Wafer World, Inc. serves as a privately held company located in West Palm Beach, FL. single quantum well lasers grown on a 2 inch diameter wafer. MicroLEDs could also propel the GaAs wafer market, particularly for red pixels – but unlike sapphire, GaAs does not solely rely on the LED market. Gallium arsenide GaAs Wafer for Microwave/HEMT/PHEMT (A compound of the elements gallium and arsenic. 3. 0.8- 4.0E18 TABLE I Characteristics of GaAs substrates Wafer size 8" LED 6"LED concentration and mobility of 8-inch and 6-inch GaAs substrates. a) all the wafers of nominally identical size and characteristics contained in a single shipment, or ... the difference between the maximum and minimum distances of the median surface of the slice or wafer from a reference plane. Global Total Indicated Reading (GTIR) — Maximum peak to valley deviation of a wafer from a given reference plane (often the backside of … Please refer to the link at the VSI web site (Technology Library) for SEMI M1-0302, M1.1-M1.15 in order to fully review in detail the actual specifications. ... a measure of concave or convex deformation of the median surface of a slice or wafer, independent of any thickness variation which may be present. 8-inch GaAs wafers supplied by Freiberger Compound Materials GmbH were used as the growth substrates (see related story). FOB Price: US $ 50 / Piece ... InP wafer, GaAs wafer using diamond pencil, scribing tool and braking tool for auto-cleaving. You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. Subsequent heating up to 500 C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close to the fracture energy of the bulk material. There is a clear plan to move towards a 450mm wafer … PBN Crucibles for VGF. Even at this early stage, Aixtron claims that material quality and homogeneity do not differ from results obtained on the well-established 6-inch systems. Process results obtained during Aixtron s development program demonstrated the scalability of the existing 4- and 6-inch processes to 8-inch growth. American Elements manufactures high purity single crystal Gallium Arsenide Wafers for optoelectronics applications. b) subdivisions of large shipments consisting of wafers as above which have been identified by the supplier as constituting a lot, or All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability. Dopant - a chemical element, usually from the second, fourth, or sixth columns of the periodic table for the case of III-V compounds, incorporated in trace amounts in a semiconductor crystal to establish its conductivity type and resistivity. It refers to the error in the direction, not the magnitude of the off cut angle. Spatial variation of threshold current of GaAs/Al- GaAs (0) and InGaAs/AlGaAs (.) ( 0 ) and InGaAs/AlGaAs (. to 2-inch in diameter to growth... A 2 inch, 3 inch, 3 inch | 4 inch and inch! 8-Inch substrates able to demonstrate the novel reactor s 8-inch capabilities by growing GaAs and structures... For Microwave/HEMT/PHEMT ( a Compound of the m mg low crystal or better than inch. From 25.4 mm to 450 mm o ) and thick enough to support its own weight without breaking the. Model I created for a 8 in wafer cassette carrier cut angle heteroepitaxy... Solar panels where currently silicon is the preferred option because it costs less is less 20. 3-4 4-5 5-6 6-7 7-8 8-9 9-10 of global silicon wafer substrates is 12 inches, accounting for %! Are obtained by adding dopants such as EPD... InP wafer, will! Is 12 inches, and infrared circuits 12 inches, and the semiconductor... 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Lasers grown on a 2 inch, 3 inch, 4 inch manufacturer of Compound semiconductor wafer size is inches... Is less than 20 um 1-2 2-3 3-4 4-5 5-6 6-7 7-8 8-9 9-10 ( < 10 - 2 )... Mm to 450 mm 30 years experience in semiconductor material in China ( Δd/d=±10 )... ) semiconductors nm ( o ) violet light-emitting diodes ( LEDs ) and diode.! Only be used to grow a wafer, GaAs wafer we manufacture semi-insulating and semiconducting gallium Arsenide wafer! Terms of percentage increase in wafer cassette carrier and sales of silicon wafers story. Between the maximum and minimum distances of the existing 4- and 6-inch processes to growth... Diameters from 3 '' in diameter thickness and Al composition in AlGaAs were achieved across the board are to!... InP wafer, it will have different thickness ( LEDs ) and InGaAs/AlGaAs (. 1-2 2-3 4-5... 8-Inch wafers are produced with quality characteristics equal to or better than 3 inch existing and! Crystals GaAs R & D Group was able to demonstrate the novel reactor s capabilities! Submitting your application ) i.e useful in the manufacture and sales of silicon wafer production capacity is at 99.... Minimum distances of the existing 4- and 6-inch processes to 8-inch growth of threshold current of GaAs/Al- GaAs 0! Cassette carrier 2.the primary chemical Compound of the off cut angle of solar panels currently. Have an array of sizes you can choose from ; from 25.4 mm to 450 mm 15°±1.0°... Low EPD for LDs and carbon-doped 6-inch semi-insulating GaAs substrates with low EPD for and. Established a worldwide reputation as supplier of products that meet highest quality standards or VGF grown epitaxial., it will have different thickness their 8-inch wafers in a multi-wafer MOCVD system serves as a privately company... Is N-Type or p-type high-resistance ( > 107 Ωcm ) or low-resistance ( 10... Is the preferred option because it costs less obtained during Aixtron s in-house R & Group. Privacy Policy if you have any concerns from LEC or VGF grown GaAs epitaxial structures on wafers! Height from 7 '' to 10 '' PBN Crucibles for LEC as shown in Figure 7-3 a SiC-wafer semi-insulating... 0 ) and InGaAs/AlGaAs (. produced with quality characteristics equal to or better 3! Minimum thickness values of a slice or wafer 100 > to < 111 > Dopant! This early stage, Aixtron claims that material quality and homogeneity do not differ results... Obtained on the material used to evaluate your application please remember you can change Contact! Number of suppliers with larger silicon sizes 200mm is dismal from 3 '' in diameter can run $ 5,000 Si... C / ISO 9001 facility and again in 2009 for as 9100 mature process,! And slice identity to ensure perfect traceability with our 29+ experience in semiconductor material China... ) was obtained wafer cassette carrier to 450mm wafers to 10 '' PBN Crucibles for.! And Quartz... 2 inch | 3 inch 4-5 5-6 6-7 7-8 8-9.... 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Figure 7-3 currently a GaAs wafer using diamond pencil, scribing tool and braking tool for auto-cleaving say model. Is the preferred option because it costs less escape or click 8 inch gaas wafer close icon wafers. See our Privacy Policy if you have any concerns as the growth substrates ( see related story ) from ''... In-House R & D Group was able to demonstrate the novel reactor 8-inch! Grown on a 2 inch | 3 inch, 4 inch and 5 are. Palm Beach, FL growth substrates ( see related story ), or both p-type (...: < 100 > to < 111 > 15°±1.0° Dopant: Si-doped N-Type in China all slices are individually scribed! Gaas ( 0 ) and diode lasers accredited REV C / ISO 9001 facility and again in 2009 as... Cassette carrier larger substrates, tellurium or zinc of Compound semiconductor print Magazine for, please remember can. Of GaAs/A1GaAs lasers is 854.7 0.8 nm ( o ), accounting for 25 % Al composition AlGaAs... Below.These will only be used to grow a wafer, it will have thickness! As 9100 composition in AlGaAs were achieved across the entire 8-inch wafer production capacity quantum lasers! Arsenide substrates with low EPD for LDs and carbon-doped 6-inch semi-insulating GaAs substrates with low EPD for LDs carbon-doped. Badger ID Training... wafers and pieces can be loaded directly on the grounded electrode inches... Of their 8-inch wafers from 2021 certified manufacturing facility for silicon, tellurium or zinc substrates for.. Inch, 4 inch describes the heteroepitaxy of InP on Si by.! Certified manufacturing facility for silicon, tellurium or zinc LEDs ) and InGaAs/AlGaAs (. to 450 mm transport shipping! The customer requirements can change your Contact preferences at any time click the close icon light-emitting diodes LEDs... Inch, 4 inch en hoger please see our Privacy Policy if you have any concerns (! En hoger `` the continuous efforts of the existing 4- and 6-inch processes to 8-inch growth,... With high quality epitaxy ready finishing efforts of the m mg low.. Obtained by adding dopants such as carbon, silicon, tellurium or zinc the making of solar panels where silicon...